Datasheet > IRF7380QPBF_10

IRF7380QPBF_10

更新时间： 2024-11-06 12:30:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	206K
描述
Advanced Process Technology Ultra Low On-Resistance

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中文翻译

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数据手册

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IRF7380QPBF_10 数据手册

PD - 96132B

IRF7380QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

NChannelMOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Lead-Free

V_DSS

80V

R_DS(on)max

I_D

73m @V_GS= 10V

2.2A

Description

Additional features of These HEXFET Power

MOSFET's are a 150°C junction operating

temperature,fast switchingspeedandimproved

repetitive avalanche rating. These benefits

combine to make this design an extremely

efficient and reliable device for use in a wide

variety of applications.

SO-8

Top View

The efficient SO-8 package provides enhanced

thermalcharacteristicsmakingitidealinavariety

of power applications. This surface mount SO-8

candramaticallyreduceboardspaceandisalso

available in Tape & Reel.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

3.6

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

2.9

@T = 25°C

Maximum Power Dissipation

Linear Derating Factor

2.0

0.02

2.3

-55 to + 150

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient (PCB Mount) *

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

Notes through are on page 8

www.irf.com

08/09/10

12 3 4 5 6 7 8

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