Datasheet > IRF7389TR

IRF7389TR

更新时间： 2024-11-24 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
10页	442K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：30V ;P：-30V;持续漏极电流（Id）（在25°C时）:-5.3A;Vgs(th)(V):±20;漏源导通电阻:N：29mΩ ;P：38mΩ@10V

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IRF7389TR 数据手册

UMW

IRF7389

P Channel MOSFET

Dual N +

Features

N-CHANNEL MOSFET

N-Ch:

VDS (V)=30V

29m (VGS = 10V)

46 m (VGS = 4.5V)

RDS(ON)

P-Ch:

VDS (V)=-30V

RDS(ON)

P-CHANNEL MOSFET

(VGS =

-10V)

58m

Top View

98 m

-4.5V)

RDS(ON)

Generation V Technology

Ultra Low On-Resistance

Complimentary Half Bridge

Surface Mount

Fully Avalanche Rated

l Lead-Free

Description

The SOP-8 has been modfied through a

customized eadframe for enhanced thermal

characteristics and multiple-die capability making

it ideal in a variety of power applications. With

these improvements. multiple devices can be

used in an application with dramatically reduced

board space. The package is desianed for vapor

phase, inra red, orwave soldering technigues

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

Maximum

Units

N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

± 20

T_A= 25°C

T_A= 70°C

7.3

5.9

-5.3

-4.2

-30

Continuous Drain Currentꢀ

I_D

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)

2.5

-2.5

T_A= 25°C

T_A= 70°C

2.5

1.6

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

140

-2.8

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

dv/dt

T_J,T_STG

3.8

-2.2

V/ ns

-55 to + 150 °C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient ꢀ

R_θJA

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...10

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