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IRF7379PBF PDF预览

IRF7379PBF

更新时间: 2024-09-13 03:08:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 220K
描述
HEXFET㈢ Power MOSFET

IRF7379PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
其他特性:AVALANCHE RATED, ULTRA LOW RESISTANCE配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):5.8 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):46 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7379PBF 数据手册

 浏览型号IRF7379PBF的Datasheet PDF文件第2页浏览型号IRF7379PBF的Datasheet PDF文件第3页浏览型号IRF7379PBF的Datasheet PDF文件第4页浏览型号IRF7379PBF的Datasheet PDF文件第5页浏览型号IRF7379PBF的Datasheet PDF文件第6页浏览型号IRF7379PBF的Datasheet PDF文件第7页 
PD - 95300  
IRF7379PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Complimentary Half Bridge  
l Surface Mount  
l Fully Avalanche Rated  
l Lead-Free  
N-CHANNEL MOSFET  
N-Ch P-Ch  
1
8
D
D
S1  
G1  
2
7
VDSS 30V  
-30V  
3
4
6
5
S2  
G2  
D
D
P-CHANNEL MOSFET  
RDS(on) 0.0450.090Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
SO-8  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
N-Channel  
P-Channel  
-30  
VSD  
Drain-to-Source Voltage  
30  
5.8  
4.6  
46  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
Power Dissipation  
-4.3  
A
-3.4  
-34  
PD @TA = 25°C  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
± 20  
VGS  
Gate-to-Source Voltage  
dv/dt  
Peak Diode Recovery dv/dt ‚  
5.0  
-5.0  
V/ns  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
50  
°C/W  
www.irf.com  
1
10/7/04  

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