是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.66 |
其他特性: | AVALANCHE RATED, ULTRA LOW RESISTANCE | 配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 5.8 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MS-012AA | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大脉冲漏极电流 (IDM): | 46 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7379QPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRF7379QTRPBF | INFINEON |
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暂无描述 | |
IRF7379TR | INFINEON |
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Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channe | |
IRF737LC | INFINEON |
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HEXFET?? Power MOSFET | |
IRF737LC-002 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRF737LC-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRF737LC-003 | INFINEON |
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Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRF737LC-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRF737LC-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRF737LC-004PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me |