IRF737LC

更新时间： 2024-10-29 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	145K
描述
HEXFET?? Power MOSFET

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中文翻译

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IRF737LC 数据手册

PD - 9.1314

IRF737LC

PRELIMINARY

HEXFET^®Power MOSFET

Reduced Gate Drive Requirement

Enhanced 30V V_GSRating

Reduced C_ISS, C_OSS, C_RSS

Extremely High Frequency Operation

Repetitive Avalanche Rated

V_DSS= 300V

R_DS(on)= 0.75Ω

I_D= 6.1A

Description

This new series of Low Charge HEXFETs achieve

significantlylowergatechargeoverconventionalMOSFETs.

Utilizing the new LCDMOS technology, the device

improvements are achieved without added product cost,

allowing for reduced gate drive requirements and total

system savings. In addition, reduced switching losses and

improved efficiency are achievable in a variety of high

frequency applications. Frequencies of a few MHz at high

current are possible using the new Low Charge MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that are characteristics of

HEXFETs offer the designer a new standard in power

transistors for switching applications.

Absolute Maximum Ratings

Parameter

Max.

6.1

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.9

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.59

±30

120

6.1

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

7.4

V/ns

3.4

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.50

Max.

Units

R_θJC

R_θCS

R_θJA

1.7

––––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

––––

12 3 4 5 6 7 8

中文翻译

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与IRF737LC相关器件

型号	品牌	获取价格	描述	数据表
IRF737LC-002	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-003	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-004	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-005	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-006	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IRF737LC-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Me

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