Datasheet > IRF7351TR

IRF7351TR

更新时间： 2024-10-15 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	504K
描述
种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:8A;Vgs(th)(V):±20;漏源导通电阻:23mΩ@10V

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中文翻译

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数据手册

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IRF7351TR 数据手册

UMW

IRF7351

Features

VDS (V) = 60V

I_D= 8A (V_GS=10V)

23 m

(VGS = 10V)

RDS(ON)

Applications

Synchronous Rectifier MOSFET for

Isolated DC-DC Converters

Low Power Motor Drive Systems

SOP-8

Benefits

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

20V V_GSMax. Gate Rating

and Current

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

8.0

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

6.4

Power Dissipation

@T_A= 25°C

@T_A= 70°C

2.0

Power Dissipation

1.28

Linear Derating Factor

Operating Junction and

0.016

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

Max.

Units

°C/W

R_θ

62.5

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

中文翻译

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