Datasheet > IRF7343TR

IRF7343TR

更新时间： 2024-05-23 22:23:24

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
10页	393K
描述
种类:N+P-Channel;漏源电压（Vdss）:N: 55V P：-55V;持续漏极电流（Id）（在25°C时）:N: 4.7A ;P：-3.4A;Vgs(th)(V):±20;漏源导通电阻:N:50mΩ ;P：90mΩ@10V

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IRF7343TR 数据手册

UMW

IRF7343

P Channel MOSFET

Dual N +

Features

N-Ch:

VDS (V)=55V

50m (VGS = 10V)

65 m (VGS = 4.5V)

RDS(ON)

N-CHANNEL MOSFET

P-Ch:

VDS (V)=-55V

90m (VGS = 10V)

100m (VGS = 4.5V)

RDS(ON)

Generation V Technology

Ultra Low On-Resistance

Surface Mount

P-CHANNEL MOSFET

Fully Avalanche Rated

Lead-Free

Top View

Description

The SOP-8 has been modified through a customized

leadirame for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. with these improvements. mutipe

devices can be used in an appication with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave

soldering techniques.

Absolute Maximum Ratings

Max.

Parameter

N-Channel

P-Channel

-55

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Drain-Source Voltage

4.7

3.8

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3.4

-2.7

-27

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

2.0

1.3

E_AS

114

-3.4

I_AR

4.7

E_AR

Repetitive Avalanche Energy

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

0.20

± 20

V/ns

°C

V_GS

dv/dt

T_J,T_STG

5.0

-5.0

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient ꢀ

Typ.

Max.

62.5

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...10

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