Datasheet > IRF7343QPBF_10

IRF7343QPBF_10

更新时间： 2024-09-17 11:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	222K
描述
HEXFET POWER MOSFET

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IRF7343QPBF_10 数据手册

PD - 96110A

IRF7343QPBF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

Dual N and P Channel MOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS55V

-55V

P-CHANNEL MOSFET

R_DS(on)0.050Ω 0.105Ω

Top View

Description

TheseHEXFET^®PowerMOSFET'sinaDualSO-8package

utilizethelastestprocessingtechniquestoachieveextremely

low on-resistance per silicon area. Additional features of

these HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating.These benefits combine to make

this design an extremely efficient and reliable device for use

in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available in Tape & Reel.

SO-8

Absolute Maximum Ratings

Max.

Parameter

N-Channel

P-Channel

-55

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Drain-Source Voltage

4.7

3.8

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3.4

-2.7

-27

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

2.0

1.3

E_AS

114

-3.4

I_AR

4.7

E_AR

Repetitive Avalanche Energy

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

0.20

± 20

V/ns

°C

V_GS

dv/dt

T_J,T_STG

5.0

-5.0

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient ꢀ

Typ.

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

08/09/10

12 3 4 5 6 7...10

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