IRF7343IPBF

更新时间： 2024-09-17 02:59:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	211K
描述
HEXFET Power MOSFET

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IRF7343IPBF 数据手册

PD - 96088

IRF7343IPbF

HEXFET^®Power MOSFET

^lGeneration V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Fully Avalanche Rated

l Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS55V

-55V

P-CHANNEL MOSFET

R_DS(on)0.050Ω 0.105Ω

Description

Top View

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

SO-8

Absolute Maximum Ratings

Max.

Parameter

N-Channel

P-Channel

-55

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Drain-Source Voltage

4.7

3.8

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3.4

-2.7

-27

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

2.0

1.3

E_AS

114

-3.4

I_AR

4.7

E_AR

Repetitive Avalanche Energy

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

0.20

± 20

V/ns

°C

V_GS

dv/dt

T_J,T_STG

5.0

-5.0

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient ꢀ

Typ.

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

07/07/06

12 3 4 5 6 7...10

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