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IRF7342PBF

更新时间： 2024-11-07 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 159K
描述
HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ)

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中文翻译

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IRF7342PBF 数据手册

 浏览型号IRF7342PBF的Datasheet PDF文件第2页浏览型号IRF7342PBF的Datasheet PDF文件第3页浏览型号IRF7342PBF的Datasheet PDF文件第4页浏览型号IRF7342PBF的Datasheet PDF文件第5页浏览型号IRF7342PBF的Datasheet PDF文件第6页浏览型号IRF7342PBF的Datasheet PDF文件第7页 
PD - 95200  
IRF7342PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual P-Channel Mosfet  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
1
2
3
4
8
S1  
G1  
S2  
D1  
VDSS = -55V  
7
D1  
6
D2  
5
D2  
G2  
RDS(on) = 0.105Ω  
l Lead-Free  
Description  
Top View  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devices can be used in an application with dramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in  
a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-55  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
Power Dissipation  
-3.4  
-2.7  
A
-27  
PD @TC = 25°C  
PD @TC = 70°C  
2.0  
W
Power Dissipation  
1.3  
Linear Derating Factor  
0.016  
± 20  
30  
W/°C  
VGS  
Gate-to-Source Voltage  
V
V
VGSM  
EAS  
Gate-to-Source Voltage Single Pulse tp<10µs  
Single Pulse Avalanche Energy‚  
114  
dv/dt  
TJ, TSTG  
Peak Diode Recovery dv/dt ƒ  
5.0  
V/ns  
°C  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientꢀ  
Typ.  
–––  
Max.  
62.5  
Units  
°C/W  
RθJA  
www.irf.com  
1
10/7/04  
1234567

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IRF7342PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7342TRPBF INFINEON

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 Generation V Technology
AUIRF7342QTR INFINEON

类似代替

 Advanced Planar Technology Low On-Resistance

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 		种类:P+P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25
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 		Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Me
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