Datasheet > IRF7342QPBF_10

IRF7342QPBF_10

更新时间： 2024-11-07 11:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	166K
描述
HEXFET? Power MOSFET

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IRF7342QPBF_10 数据手册

PD - 96109A

IRF7342QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

Dual P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free

V_DSS= -55V

R_DS(on)= 0.105Ω

Top View

Description

TheseHEXFET^®PowerMOSFET'sinaDualSO-8package

utilizethelastestprocessingtechniquestoachieveextremely

low on-resistance per silicon area. Additional features of

these HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These benefits combine to

make this design an extremely efficient and reliable device

for use in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available in Tape & Reel.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-55

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

-3.4

-2.7

-27

P_D@T_C= 25°C

P_D@T_C= 70°C

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

± 20

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

114

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

5.0

V/ns

°C

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

–––

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

08/03/10

12 3 4 5 6 7

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