Datasheet > IRF7342TRPBF

IRF7342TRPBF

更新时间： 2024-11-07 12:33:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	164K
描述
Generation V Technology

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中文翻译

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数据手册
替代型号

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IRF7342TRPBF 数据手册

PD - 95200

IRF7342PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= -55V

R_DS(on)= 0.105Ω

l Lead-Free

Description

Top View

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-55

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

-3.4

-2.7

-27

P_D@T_C= 25°C

P_D@T_C= 70°C

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

± 20

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

114

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

5.0

V/ns

°C

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

–––

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

10/7/04

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中文翻译

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IRF7342TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7342QTR	INFINEON	类似代替	Advanced Planar Technology Low On-Resistance
IRF7342PBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) =

与IRF7342TRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7342TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Me
IRF7343	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343IPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343QPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7343QPBF_10	INFINEON	获取价格	HEXFET POWER MOSFET
IRF7343QTRPBF	INFINEON	获取价格	Transistor,
IRF7343TR	INFINEON	获取价格	Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel
IRF7343TR	UMW	获取价格	种类:N+P-Channel;漏源电压（Vdss）:N: 55V P：-55V;持续漏极电
IRF7343TRPBF	INFINEON	获取价格	generation v technology