Datasheet > IRF7342TR

IRF7342TR

更新时间： 2024-10-15 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	344K
描述
种类:P+P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C时）:-3.4A;Vgs(th)(V):±20;漏源导通电阻:105mΩ@-10V

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IRF7342TR 数据手册

UMW

IRF7342

Dual P-Channel MOSFET

Features

VDS (V)=-55V

RDS(ON)

105m (VGS =-10V)

170m (VGS =-4.5V)

RDS(ON)

Generation V Technology

Ultra Low On-Resistance

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

Top View

Description

The SOP-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety

of power applications. With these improvements,

multiple devices can be used in an application

with dramatically reduced board space. The packa-

ge is designed for vapor phase, infra red, or wave

soldering techniques. Power dissipation of greater

than 0.8W is possible in a typical PCB mount app-

lication.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-55

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3.4

-2.7

-27

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

± 20

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

114

dv/dt

T_J,T_STG

5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

Max.

62.5

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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