Datasheet > IRF7342PBF-1_15

IRF7342PBF-1_15

更新时间： 2024-11-08 02:55:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	178K
描述
Industry-standard pinout SO-8 Package

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中文翻译

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数据手册

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IRF7342PBF-1_15 数据手册

IRF7342PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= -10V)

Q_{g (typical)}

I_D

-55

0.105

-3.4

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7342PbF-1

IRF7342TRPbF-1

IRF7342PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-55

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3.4

-2.7

-27

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

± 20

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10μs

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

114

5.0

dv/dt

T_J,T_STG

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambientꢀ

–––

62.5

°C/W

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November 18, 2013

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