IRF7341IPBF

更新时间： 2024-11-13 02:54:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	138K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRF7341IPBF 数据手册

PD-95087

IRF7341IPbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.050Ω

l Lead-Free

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

4.7

3.8

P_D@T_C= 25°C

P_D@T_C= 70°C

2.0

1.3

0.016

± 20

Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

5.0

V/ns

°C

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

–––

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

07/07/06

12 3 4 5 6 7

中文翻译

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