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IRF7342D2 PDF预览

IRF7342D2

更新时间: 2024-11-07 12:19:59
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管
页数 文件大小 规格书
11页 144K
描述
FETKY MOSFET & Schottky Diode

IRF7342D2 数据手册

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PD- 94101A  
IRF7342D2  
FETKYTM MOSFET & Schottky Diode  
l Co-packaged HEXFET® Power  
MOSFET and Schottky Diode  
l Ideal For Buck Regulator Applications  
l P-Channel HEXFET®  
l Low VF Schottky Rectifier  
l SO-8 Footprint  
1
2
3
4
8
7
K
K
A
VDSS = -55V  
A
6
5
RDS(on) = 105mΩ  
Schottky Vf = 0.61V  
S
D
D
G
Top View  
Description  
The FETKYTM family of Co-packaged HEXFETs and  
Schottky diodes offer the designer an innovative board  
space saving solution for switching regulator and  
power management applications. HEXFETs utilize  
advanced processing techniques to achieve extremely  
low on-resistance per silicon area. Combining this  
technology with International Rectifier's low forward  
drop Schottky rectifiers results in an extremely efficient  
device suitable for use in a wide variety of portable  
electronics applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics. The  
SO-8 package is designed for vapor phase, infrared or  
wave soldering techniques.  
SO-8  
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)  
Parameter  
Maximum  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current À  
-3.4  
A
-2.7  
-27  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
2.0  
W
Power Dissipation  
1.3  
Linear Derating Factor  
16  
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 20  
dv/dt  
Peak Diode Recovery dv/dt Á  
Junction and Storage Temperature Range  
-5.0  
V/ns  
°C  
TJ, TSTG  
-55 to +150  
ThermalResistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJL  
Junction-to-DrainLead, MOSFET  
Junction-to-Ambient „, MOSFET  
Junction-to-Ambient „, SCHOTTKY  
–––  
20  
RθJA  
RθJA  
–––  
–––  
62.5  
62.5  
°C/W  
Notes:  
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)  
‚ ISD -3.4A, di/dt -150A/µs, VDD V(BR)DSS, TJ 150°C  
ƒ Pulse width 400µs – duty cycle 2%  
„ Surface mounted on 1 inch square copper board, t 10sec.  
www.irf.com  
1
10/21/04  

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种类:P+P-Channel;漏源电压(Vdss):-55V;持续漏极电流(Id)(在25