Datasheet > IRF7341TR

IRF7341TR

更新时间： 2024-10-15 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	377K
描述
种类:N+N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时）:4.7A;Vgs(th)(V):±20;漏源导通电阻:30mΩ@10V

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IRF7341TR 数据手册

UMW

IRF7341

Description

The SOP-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in a

typical PCB mount application.

SOP-8

Generation V Technology

Ultra Low On-Resistance

Dual N-Channel Mosfet

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

Features

VDS (V) = 55V

I_D= 4.7A (V_GS=10V)

30m

45m

(VGS = 10V)

(VGS = 4.5V)

RDS(ON)

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

4.7

3.8

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

2.0

1.3

0.016

± 20

Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

dv/dt

T_J,T_STG

5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

Max.

62.5

Units

°C/W

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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