IRF7341Q

更新时间： 2024-11-07 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	157K
描述
HEXFET Power MOSFET

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IRF7341Q 数据手册

PD - 94391B

IRF7341Q

HEXFET^®Power MOSFET

Typical Applications

• Anti-lock Braking Systems (ABS)

• Electronic Fuel Injection

• Air bag

V_DSS

55V

R_DS(on)max

0.050@V_GS= 10V

0.065@V_GS= 4.5V

I_D

5.1A

Benefits

• Advanced Process Technology

• Dual N-Channel MOSFET

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Repetitive Avalanche Allowed up to Tjmax

• Automotive [Q101] Qualified

4.42A

Description

Specifically designed for Automotive applications, these

HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

AutomotivequalifiedHEXFETPowerMOSFET’sarea175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits com-

bine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety

of other applications.

SO-8

Top View

The 175°C rating for the SO-8 package provides improved

thermal performance with increased safe operating area and

dual MOSFET die capability make it ideal in a variety of

power applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also available in

Tape & Reel.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.1

4.2

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.4

1.7

± 20

mW/°C

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Avalanche Current

140

I_AR

5.1

E_AR

Repetitive Avalanche Energy

Junction and Storage Temperature Range

See Fig. 14, 15, 16

-55 to + 175

°C

T_J, T_STG

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.irf.com

02/15/05

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