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IRF6646TR1

更新时间： 2024-09-09 19:53:39
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 643K
描述
Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-2

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IRF6646TR1 数据手册

 浏览型号IRF6646TR1的Datasheet PDF文件第2页浏览型号IRF6646TR1的Datasheet PDF文件第3页浏览型号IRF6646TR1的Datasheet PDF文件第4页浏览型号IRF6646TR1的Datasheet PDF文件第5页浏览型号IRF6646TR1的Datasheet PDF文件第6页浏览型号IRF6646TR1的Datasheet PDF文件第7页 
PD - 96995E  
IRF6646  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS compliant containing no lead or bromide   
l Low Profile (<0.7 mm)  
VDSS  
80V max ±20V max  
VGS  
RDS(on)  
7.6mΩ@ 10V  
Vgs(th)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot  
Qgd  
36nC  
12nC  
3.8V  
l Optimized for High Frequency Switching   
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MN  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
M N  
SQ  
SX  
ST  
MQ  
M X  
MT  
Description  
The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input voltage  
range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses  
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability  
improvements, and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
80  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
12  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
9.6  
68  
@ TA = 70°C  
@ TC = 25°C  
A
96  
DM  
EAS  
IAR  
230  
7.2  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
0.05  
0.04  
0.03  
0.02  
0.01  
0
12.0  
10.0  
8.0  
I
= 7.2A  
I = 7.2A  
D
D
V
= 40V  
DS  
DS  
V
= 16V  
6.0  
T
= 125°C  
4.0  
J
2.0  
T
= 25°C  
J
0.0  
4
6
8
10  
12  
14  
16  
0
10  
Q
20  
30  
40  
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source  
Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 8.8mH, RG = 25Ω, IAS = 7.2A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/04/05  
1234567...10

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