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IRF6646TR1PBF

更新时间： 2024-09-09 12:32:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器插座开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
10页 655K
描述
Ideal for High Performance Isolated Converter Primary Switch Socket

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IRF6646TR1PBF 数据手册

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PD - 97224A  
IRF6646PbF  
IRF6646TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant   
RDS(on)  
VDSS  
VGS  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
7.6mΩ@ 10V  
80V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
36nC  
12nC  
2.0nC  
48nC  
18nC  
3.8V  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MN  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
M N  
SQ  
SX  
ST  
MQ  
M X  
MT  
Description  
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input  
voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced  
total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for  
system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
80  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
12  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
9.6  
68  
@ TA = 70°C  
@ TC = 25°C  
A
96  
DM  
EAS  
IAR  
230  
7.2  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
0.05  
0.04  
0.03  
0.02  
0.01  
0
12.0  
10.0  
8.0  
I
= 7.2A  
I = 7.2A  
D
D
V
= 40V  
DS  
DS  
V
= 16V  
6.0  
T
= 125°C  
4.0  
J
2.0  
T
= 25°C  
J
0.0  
4
6
8
10  
12  
14  
16  
0
10  
Q
20  
30  
40  
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source  
Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 8.8mH, RG = 25Ω, IAS = 7.2A.  
www.irf.com  
1
08/24/06  
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IRF6646TR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6646TRPBF INFINEON

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