是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | ROHS COMPLIANT, ISOMETRIC-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
Is Samacsys: | N | 其他特性: | LOW CONDUCTION LOSS |
雪崩能效等级(Eas): | 47 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 86 A | 最大漏极电流 (ID): | 86 A |
最大漏源导通电阻: | 0.007 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.8 W | 最大脉冲漏极电流 (IDM): | 260 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6648TR1 | INFINEON |
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RoHs Compliant Containing No Lead and Bromide |
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IRF6648TR1PBF | INFINEON |
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Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Met |
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IRF6648TRPBF | INFINEON |
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Benchmark MOSFETs Product Selection Guide |
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IRF6655 | INFINEON |
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DirectFET Power MOSFET Typical values (unless otherwise specified) |
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IRF6655PBF | INFINEON |
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DirectFET Power MOSFET |
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IRF6655TR1 | INFINEON |
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Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, M |
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IRF6655TR1PBF | INFINEON |
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Application Specific MOSFETs |
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IRF6655TRPBF | INFINEON |
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DirectFET Power MOSFET |
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IRF6662 | INFINEON |
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DirectFet Power MOSFET Typical values (unless otherwise specified) |
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IRF6662PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, M |
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