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IRF6648PBF PDF预览

IRF6648PBF

更新时间： 2024-09-09 11:59:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲瞄准线
页数 文件大小 规格书
10页 645K
描述
DirectFETPower MOSFET 

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IRF6648PBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
雪崩能效等级（Eas）：47 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：86 A最大漏极电流 (ID)：86 A
最大漏源导通电阻：0.007 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.8 W最大脉冲漏极电流 (IDM)：260 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6648PBF 数据手册

 浏览型号IRF6648PBF的Datasheet PDF文件第2页浏览型号IRF6648PBF的Datasheet PDF文件第3页浏览型号IRF6648PBF的Datasheet PDF文件第4页浏览型号IRF6648PBF的Datasheet PDF文件第5页浏览型号IRF6648PBF的Datasheet PDF文件第6页浏览型号IRF6648PBF的Datasheet PDF文件第7页 
PD - 97225A  
IRF6648PbF  
IRF6648TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
RDS(on)  
VDSS  
VGS  
l Optimized for Synchronous Rectification for  
5V to 12V outputs  
l Low Conduction Losses  
5.5mΩ@ 10V  
60V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
36nC  
14nC  
2.7nC  
37nC  
21nC  
4.0V  
l Ideal for 24V input Primary Side Forward Converters  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MN  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-  
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and  
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing  
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,  
improving previous best thermal resistance by 80%.  
The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as  
a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal  
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this  
device ideal for high performance.  
Absolute Maximum Ratings  
Max.  
60  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
86  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
D
D
69  
@ TC = 70°C  
A
260  
47  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
34  
60  
50  
40  
30  
20  
10  
0
12.0  
10.0  
8.0  
I
= 17A  
I = 17A  
D
D
V
= 48V  
= 30V  
DS  
V
DS  
6.0  
4.0  
T
= 125°C  
12  
J
2.0  
T
= 25°C  
6
J
0.0  
4
8
10  
14  
16  
0
5
10  
15  
20  
25  
30  
35  
40  
Q , Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage  
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.082mH, RG = 25Ω, IAS = 34A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
08/24/06  
1234567...10

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