是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 29 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 5.7 A |
最大漏极电流 (ID): | 5.7 A | 最大漏源导通电阻: | 0.035 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 42 W |
最大脉冲漏极电流 (IDM): | 45 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF6645 | INFINEON |
类似代替 ![]() |
DirectFET Power MOSFET Typical calues (unless otherwise specified) |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6645PBF_15 | INFINEON |
获取价格 |
Application Specific MOSFETs |
![]() |
IRF6645TRPBF | INFINEON |
获取价格 |
Benchmark MOSFETs Product Selection Guide |
![]() |
IRF6646 | INFINEON |
获取价格 |
DirectFET Power MOSFET |
![]() |
IRF6646PBF | INFINEON |
获取价格 |
DirectFETPower MOSFET |
![]() |
IRF6646TR1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
IRF6646TR1PBF | INFINEON |
获取价格 |
Ideal for High Performance Isolated Converter Primary Switch Socket |
![]() |
IRF6646TRPBF | INFINEON |
获取价格 |
Benchmark MOSFETs Product Selection Guide |
![]() |
IRF6648 | INFINEON |
获取价格 |
DirectFET Power MOSFET |
![]() |
IRF6648PBF | INFINEON |
获取价格 |
DirectFETPower MOSFET |
![]() |
IRF6648TR1 | INFINEON |
获取价格 |
RoHs Compliant Containing No Lead and Bromide |
![]() |