5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRF6645PBF
IRF6645PBF PDF预览

IRF6645PBF

更新时间： 2024-09-09 11:59:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 226K
描述
DirectFETPower MOSFET 

阅读下载

中文翻译

获取价格

IRF6645PBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N雪崩能效等级（Eas）：29 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：5.7 A
最大漏极电流 (ID)：5.7 A最大漏源导通电阻：0.035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：42 W
最大脉冲漏极电流 (IDM)：45 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6645PBF 数据手册

 浏览型号IRF6645PBF的Datasheet PDF文件第2页浏览型号IRF6645PBF的Datasheet PDF文件第3页浏览型号IRF6645PBF的Datasheet PDF文件第4页浏览型号IRF6645PBF的Datasheet PDF文件第5页浏览型号IRF6645PBF的Datasheet PDF文件第6页浏览型号IRF6645PBF的Datasheet PDF文件第7页 
IRF6645PbF  
IRF6645TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
VDSS  
VGS  
RDS(on)  
28m@ 10V  
Vgs(th)  
100V max ±20V max  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
Qg tot  
Qgd  
14nC  
4.8nC  
4.0V  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
l Halogen-Free  
DirectFET™ ISOMETRIC  
SJ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom  
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device  
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability  
improvements, and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
5.7  
4.5  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
45  
DM  
EAS  
IAR  
29  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
3.4  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
I = 3.4A  
V
= 80V  
I
= 3.4A  
D
DS  
D
VDS= 50V  
T
T
= 125°C  
J
6
4
= 25°C  
14  
J
2
0
4
6
8
10  
12  
16  
0
4
8
12  
16  
V
, Gate-to-Source Voltage (V)  
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 5.0mH, RG = 25, IAS = 3.4A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
1
www.irf.com  
© 2012 International Rectifier  
July 25, 2012  
1234567...9

中文翻译

下载PDF

IRF6645PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6645 INFINEON

类似代替

 DirectFET Power MOSFET Typical calues (unless otherwise specified)

与IRF6645PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF6645PBF_15 INFINEON

获取价格

 		Application Specific MOSFETs
IRF6645TRPBF INFINEON

获取价格

 		Benchmark MOSFETs Product Selection Guide
IRF6646 INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6646PBF INFINEON

获取价格

 		DirectFETPower MOSFET 
IRF6646TR1 INFINEON

获取价格

 		Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRF6646TR1PBF INFINEON

获取价格

 		Ideal for High Performance Isolated Converter Primary Switch Socket
IRF6646TRPBF INFINEON

获取价格

 		Benchmark MOSFETs Product Selection Guide
IRF6648 INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6648PBF INFINEON

获取价格

 		DirectFETPower MOSFET 
IRF6648TR1 INFINEON

获取价格

 		RoHs Compliant Containing No Lead and Bromide

与IRF6645PBF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证