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IRF6645 PDF预览

IRF6645

更新时间： 2024-01-29 20:27:53
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 243K
描述
DirectFET Power MOSFET Typical calues (unless otherwise specified)

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中文翻译

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IRF6645 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.16
雪崩能效等级（Eas）：29 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：5.7 A最大漏源导通电阻：0.035 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：45 A
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6645 数据手册

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PD - 97006  
IRF6645  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
28mΩ@ 10V  
Vgs(th)  
100V max ±20V max  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot  
Qgd  
l Optimized for High Frequency Switching   
14nC  
4.8nC  
4.0V  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
l Low Conduction Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
SJ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications  
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled  
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,  
and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
5.7  
4.5  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
45  
DM  
EAS  
IAR  
29  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
3.4  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
I = 3.4A  
V
= 80V  
I
= 3.4A  
D
DS  
D
VDS= 50V  
T
T
= 125°C  
J
6
4
= 25°C  
14  
J
2
0
4
6
8
10  
12  
16  
0
4
8
12  
16  
V
, Gate-to-Source Voltage (V)  
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 5.0mH, RG = 25Ω, IAS = 3.4A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
8/5/05  
1234567...9

中文翻译

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IRF6645 替代型号

型号 品牌 替代类型 描述 数据表
IRF6645PBF INFINEON

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