Datasheet > IRF66451PBF

IRF66451PBF

更新时间： 2024-09-10 01:23:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	239K
描述
RoHS Compliant, Halogen-Free

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中文翻译

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数据手册

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IRF66451PBF 数据手册

IRF6645PbF

IRF6645TRPbF

DirectFET Power MOSFET

Typical values (unless otherwise specified)

l RoHS Compliant, Halogen-Free

l Lead-Free (Qualified up to 260°C Reflow)

l Application Specific MOSFETs

V_DSS

V_GS

R_DS(on)

28mΩ@ 10V

V_gs(th)

100V max ±20V max

l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Optimized for Synchronous Rectification

l Low Conduction Losses

Q_{g tot}

Q_gd

14nC

4.8nC

4.0V

l High Cdv/dt Immunity

l Low Profile (<0.7mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the

lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling

to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom

applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device

coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability

improvements, and makes this device ideal for high performance isolated DC-DC converters.

Absolute Maximum Ratings

Max.

100

±20

5.7

4.5

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

3.4

I = 3.4A

= 80V

= 3.4A

VDS= 50V

= 125°C

= 25°C

, Gate-to-Source Voltage (V)

Total Gate Charge (nC)

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 5.0mH, R_G= 25Ω, I_AS= 3.4A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

February 26, 2013

12 3 4 5 6 7...9

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与IRF66451PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF6645PBF	INFINEON	获取价格	DirectFETPower MOSFET
IRF6645PBF_15	INFINEON	获取价格	Application Specific MOSFETs
IRF6645TRPBF	INFINEON	获取价格	Benchmark MOSFETs Product Selection Guide
IRF6646	INFINEON	获取价格	DirectFET Power MOSFET
IRF6646PBF	INFINEON	获取价格	DirectFETPower MOSFET
IRF6646TR1	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRF6646TR1PBF	INFINEON	获取价格	Ideal for High Performance Isolated Converter Primary Switch Socket
IRF6646TRPBF	INFINEON	获取价格	Benchmark MOSFETs Product Selection Guide
IRF6648	INFINEON	获取价格	DirectFET Power MOSFET
IRF6648PBF	INFINEON	获取价格	DirectFETPower MOSFET

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