Datasheet > IPB100N12S3-05

IPB100N12S3-05

更新时间： 2024-11-21 05:27:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	405K
描述
Power Field-Effect Transistor

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中文翻译

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数据手册

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IPB100N12S3-05 数据手册

IPB100N12S3-05

IPI100N12S3-05, IPP100N12S3-05

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

120

4.8

R_DS(on),max(SMD version)

I_D

100

Features

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Type

Package

Marking

IPB100N12S3-05

IPI100N12S3-05

IPP100N12S3-05

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3PN1205

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

100

T _C=100 °C,

V_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C

400

1445

100

±20

300

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=50A

I _AS

V_GS

P_tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2016-06-20

12 3 4 5 6 7...9

中文翻译

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