Datasheet > IPB120N04S3-02

IPB120N04S3-02

更新时间： 2024-02-28 19:25:04

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	193K
描述
OptiMOS-T Power-Transistor

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IPB120N04S3-02 数据手册

IPB120N04S3-02

IPI120N04S3-02, IPP120N04S3-02

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

2.0

120

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Type

Package

Marking

3PN0402

IPB120N04S3-02

IPI120N04S3-02

IPP120N04S3-02

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

120

_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=80 A

480

1880

Avalanche energy, single pulse

Gate source voltage

V_GS

±20

P_tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2007-04-30

12 3 4 5 6 7...9

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