Datasheet > IPB120N08S4-03

IPB120N08S4-03

更新时间： 2024-10-02 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	225K
描述
仿真/ SPICE-型号

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPB120N08S4-03 数据手册

IPB120N08S4-03

IPI120N08S4-03, IPP120N08S4-03

OptiMOS^™-T2 Power-Transistor

Product Summary

V _DS

2.5

120

R _DS(on),max(SMD version)

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4N0803

IPB120N08S4-03

IPI120N08S4-03

IPP120N08S4-03

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V _GS=10V¹⁾

I _D

Continuous drain current

120

T _C=100°C, V _GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25°C

480

920

120

±20

278

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=60A

I _AS

V _GS

P _tot

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2014-06-20

12 3 4 5 6 7...9

中文翻译

下载PDF

与IPB120N08S4-03相关器件

型号	品牌	获取价格	描述	数据表
IPB120N08S4-04	INFINEON	获取价格	本培训解释了TOLG的优势以及该封装的目标工业应用和汽车应用；并列出了当前可用的产品系列，
IPB120N08S404ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, M
IPB120N10S4-03	INFINEON	获取价格	仿真/SPICE 型号
IPB120N10S403ATMA1	INFINEON	获取价格	Power Field-Effect Transistor,
IPB120N10S4-05	INFINEON	获取价格	车规级MOSFET
IPB120N10S405ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, M
IPB120P04P4-04	INFINEON	获取价格	OptiMOS-P2 Power-Transistor
IPB120P04P404ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 40V, 0.0035ohm, 1-Element, P-Channel, Silicon, M
IPB120P04P4L-03	INFINEON	获取价格	OptiMOS-P2 Power-Transistor
IPB120P04P4L03ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, M