型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB120N10S405ATMA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, M | |
IPB120P04P4-04 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPB120P04P404ATMA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 40V, 0.0035ohm, 1-Element, P-Channel, Silicon, M | |
IPB120P04P4L-03 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPB120P04P4L03ATMA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, M | |
IPB120P04P4L03ATMA2 | INFINEON |
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Power Field-Effect Transistor, | |
IPB123N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM | |
IPB123N10N3G | INFINEON |
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OptiMOSTM3 Power-Transistor | |
IPB123N10N3GATMA1 | INFINEON |
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Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, M | |
IPB12CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor |