Datasheet > IPB120N03S4L-03

IPB120N03S4L-03

更新时间： 2024-04-09 18:40:57

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	277K
描述
车规级MOSFET

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中文翻译

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IPB120N03S4L-03 数据手册

IPB120N03S4L-03

OptiMOS^™-T2 Power-Transistor

Product Summary

Features

V _DS

• N-channel - Enhancement mode

R _DS(on),max

I _D

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• 100% Avalanche tested

120

PG-TO263-3-2

Type

Package

Ordering Code Marking

- 4N03L03

IPB120N03S4L-03

PG-TO263-3-2

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V _GS=10V

120

T _C=100°C, V _GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25°C

I _D=60A

480

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

I _AS

120

V _GS

±16

P _tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2014-04-28

12 3 4 5 6 7...9

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