Datasheet > HGTG12N60C3D

HGTG12N60C3D

更新时间： 2024-09-09 22:51:19

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英特矽尔 - INTERSIL		晶体二极管晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	101K
描述
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG12N60C3D 数据手册

HGTG12N60C3D

Data Sheet

January 2000

File Number 4043.2

24A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 24A, 600V at T = 25 C

The HGTG12N60C3D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25 C and 150 C. The IGBT used is the

development type TA49123. The diode used in anti parallel

with the IGBT is the development type TA49061.

• Typical Fall Time. . . . . . . . . . . . . . . . 210ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential.

Formerly Developmental Type TA49117.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G12N60C3D

HGTG12N60C3D

TO-247

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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