5秒后页面跳转
捷配首页

Datasheet > HGTG12N60C3DR
HGTG12N60C3DR PDF预览

HGTG12N60C3DR

更新时间： 2024-09-10 21:03:55
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网电动机控制栅瞄准线双极性晶体管开关
页数 文件大小 规格书
7页 94K
描述
24A, 600V, N-CHANNEL IGBT, TO-247

阅读下载

中文翻译

获取价格

HGTG12N60C3DR 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
风险等级：5.13其他特性：LOW CONDUCTION LOSS, ULTRA FAST
外壳连接：COLLECTOR最大集电极电流 (IC)：24 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：400 ns门极发射器阈值电压最大值：7.5 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：104 W
认证状态：Not Qualified最大上升时间（tr）：38 ns
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：540 ns
标称接通时间 (ton)：74 nsBase Number Matches：1

HGTG12N60C3DR 数据手册

 浏览型号HGTG12N60C3DR的Datasheet PDF文件第2页浏览型号HGTG12N60C3DR的Datasheet PDF文件第3页浏览型号HGTG12N60C3DR的Datasheet PDF文件第4页浏览型号HGTG12N60C3DR的Datasheet PDF文件第5页浏览型号HGTG12N60C3DR的Datasheet PDF文件第6页浏览型号HGTG12N60C3DR的Datasheet PDF文件第7页 
HGTG12N60C3DR,  
HGTP12N60C3DR, HGT1S12N60C3DRS  
Data Sheet  
June 2000  
File Number 4467.1  
24A, 600V, Rugged, UFS Series N-Channel  
IGBTs with Anti-Parallel Ultrafast Diodes  
Features  
o
• 24A, 600V at T = 25 C  
C
[ /Title  
(HGT  
G12N6  
0C3D  
R,  
HGTP  
12N60  
C3DR,  
HGT1  
S12N6  
0C3D  
RS)  
This family of IGBTs was designed for optimum performance  
in the demanding world of motor control operation as well as  
other high voltage switching applications. These devices  
demonstrate RUGGED performance capability when  
subjected to harsh SHORT CIRCUIT WITHSTAND TIME  
(SCWT) conditions. The parts have ULTRAFAST (UFS)  
switching speed while the on-state conduction losses have  
been kept at a low level.  
• 600V Switching SOA Capability  
o
• Typical Fall Time at T = 150 C . . . . . . . . . . . . . . . . 250ns  
J
o
• Short Circuit Rating at T = 150 C. . . . . . . . . . . . . . .10µs  
J
• Low Conduction Loss  
• Ultrafast Anti-Parallel Diode  
• Related Literature  
The electrical specifications include typical Turn-On and  
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings  
include the effect of the diode in the test circuit (Figure 17).  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
The data was obtained with the diode at the same T as the  
Packaging  
J
IGBT under test. The diode used in anti-parallel with the  
IGBT is development type TA49213. The IGBT is  
development type TA49118.  
JEDEC TO-220AB (ALTERNATE VERSION)  
/Sub-  
ject  
E
C
G
(24A,  
600V,  
Rug-  
ged,  
UFS  
Series  
N-  
Formerly development type TA49124.  
COLLECTOR  
(FLANGE)  
Ordering Information  
PART NUMBER  
HGTP12N60C3DR  
HGT1S12N60C3DRS  
HGTG12N60C3DR  
PACKAGE  
BRAND  
12N60CDR  
TO-220AB  
TO-263AB  
TO-247  
12N60CDR  
JEDEC TO-247AB  
12N60C3DR  
Chan-  
nel  
IGBT  
with  
Anti-  
Paral-  
lel  
E
C
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, ie.,  
HGT1S12N60C3DRS9A.  
G
Symbol  
COLLECTOR  
(BOTTOM SIDE  
MEDAL)  
C
Ultrafa  
st  
Diode)  
/Autho  
r ()  
/Key-  
words  
(24A,  
600V,  
Rug-  
ged,  
G
JEDEC TO-263AB  
COLLECTOR  
E
(FLANGE)  
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
UFS  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
2-1  
1234567

中文翻译

下载PDF

与HGTG12N60C3DR相关器件

型号 品牌 获取价格 描述 数据表
HGTG12N60D1 INTERSIL

获取价格

 		12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
HGTG12N60D1D INTERSIL

获取价格

 		12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
HGTG15N120B3D RENESAS

获取价格

 		1200V, N-CHANNEL IGBT, TO-247
HGTG15N120C3 INTERSIL

获取价格

 		35A, 1200V, UFS Series N-Channel IGBTs
HGTG15N120C3 RENESAS

获取价格

 		TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-247
HGTG15N120C3D INTERSIL

获取价格

 		35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BN FAIRCHILD

获取价格

 		54A, 1200V, NPT Series N-Channel IGBT
HGTG18N120BN INTERSIL

获取价格

 		54A, 1200V, NPT Series N-Channel IGBT
HGTG18N120BN ONSEMI

获取价格

 		1200 V NPT IGBT
HGTG18N120BN_NL FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247

与HGTG12N60C3DR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证