Datasheet > HGTG18N120BND_07

HGTG18N120BND_07

更新时间： 2024-09-14 04:21:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管双极性晶体管
页数	文件大小	规格书
8页	196K
描述
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG18N120BND_07 数据手册

HGTG18N120BND

Data Sheet

March 2007

54A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 54A, 1200V, T = 25 C

The HGTG18N120BND is a Non-Punch Through (NPT)

IGBT design. This is a new member of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49304.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

PACKAGE

BRAND

18N120BND

HGTG18N120BND

TO-247

NOTE: When ordering, use the entire part number.

Symbol

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG18N120BND Rev.C

12 3 4 5 6 7 8

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