Datasheet > HGTG20N120CN

HGTG20N120CN

更新时间： 2024-09-13 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		双极性晶体管
页数	文件大小	规格书
7页	86K
描述
63A, 1200V, NPT Series N-Channel IGBT

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HGTG20N120CN 数据手册

HGTG20N120CN

Data Sheet

January 2000

File Number 4533.2

63A, 1200V, NPT Series N-Channel IGBT

Features

The HGTG20N120CN is a Non-Punch Through (NPT) IGBT

design. This is a new member of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

• 63A, 1200V, T = 25 C

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

• Temperature Compensating SABER™ Model

www.intersil.com

Packaging

Formerly Developmental Type TA49289.

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

G20N120CN

HGTG20N120CN

TO-247

NOTE: When ordering, use the entire part number

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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