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HGTG20N100D2

更新时间： 2024-09-13 22:34:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 双极性晶体管
页数 文件大小 规格书
5页 40K
描述
20A, 1000V N-Channel IGBT

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HGTG20N100D2 数据手册

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HGTG20N100D2  
20A, 1000V N-Channel IGBT  
May 1995  
Features  
Package  
JEDEC STYLE TO-247  
• 34A, 1000V  
EMITTER  
• Latch Free Operation  
• Typical Fall Time 520ns  
• High Input Impedance  
• Low Conduction Loss  
COLLECTOR  
GATE  
COLLECTOR  
(BOTTOM SIDE  
METAL)  
Description  
The HGTG20N100D2 is a MOS gated high voltage switching  
device combining the best features of MOSFETs and bipolar  
transistors. The device has the high input impedance of a MOS-  
FET and the low on-state conduction loss of a bipolar transistor.  
The much lower on-state voltage drop varies only moderately  
between +25oC and +150oC.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
IGBTs are ideal for many high voltage switching applications  
operating at frequencies where low conduction losses are essen-  
tial, such as: AC and DC motor controls, power supplies and  
drivers for solenoids, relays and contactors.  
C
PACKAGING AVAILABILITY  
G
PART NUMBER  
PACKAGE  
TO-247  
BRAND  
HGTG20N100D2  
G20N100D2  
E
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTG20N100D2  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
1000  
1000  
34  
V
V
A
A
A
V
V
-
CES  
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
GE  
CGR  
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
C25  
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
20  
C
C90  
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
100  
±20  
±30  
CM  
GES  
GEM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA  
100A at 0.8 BV  
150  
J
o
CES  
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
W
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
1.20  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T  
-55 to +150  
260  
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
(0.125 inch from case for 5 seconds)  
C
L
Short Circuit Withstand Time (Note 2) at V = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t  
3
µs  
µs  
GE  
SC  
SC  
at V = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t  
15  
GE  
NOTES:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
o
2. V  
= 600V, T = +125 C, R = 25Ω.  
CE(PEAK)  
C
GE  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2826.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-93  
12345

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