Datasheet > HGTG15N120C3

HGTG15N120C3

更新时间： 2024-09-09 22:34:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制双极性晶体管栅局域网
页数	文件大小	规格书
11页	142K
描述
35A, 1200V, UFS Series N-Channel IGBTs

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HGTG15N120C3 数据手册

HGTG15N120C3, HGTP15N120C3,

HGT1S15N120C3, HGT1S15N120C3S

35A, 1200V, UFS Series N-Channel IGBTs

June 1997

Features

Description

• 35A, 1200V, T = 25 C

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3

and HGT1S15N120C3S are MOS gated high voltage switching

devices combining the best features of MOSFETs and bipolar

• 1200V Switching SOA Capability

transistors. These devices have the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar tran-

sistor. The much lower on-state voltage drop varies only moder-

• Typical Fall Time . . . . . . . . . . . . . . 350ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

ately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction

losses are essential, such as: AC and DC motor controls,

power supplies and drivers for solenoids, relays and contactors.

Ordering Information

PART NUMBER

HGTG15N120C3

HGTP15N120C3

HGT1S15N120C3

HGT1S15N120C3S

PACKAGE

BRAND

15N120C3

TO-247

TO-220AB

TO-262AA

TO-263AB

15N120C3

Symbol

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263 variant in tape and reel; i.e.,

HGT1S15N120C3S9A.

Formerly Developmental Type TA49145.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB (ALTERNATE VERSION)

EMITTER

COLLECTOR

GATE

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

JEDEC TO-262AA

JEDEC TO-263AB

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

GATE

COLLECTOR

(FLANGE)

EMITTER

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,969,027

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4244.3

12 3 4 5 6 7...11

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与HGTG15N120C3相关器件

型号	品牌	获取价格	描述	数据表
HGTG15N120C3D	INTERSIL	获取价格	35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BN	FAIRCHILD	获取价格	54A, 1200V, NPT Series N-Channel IGBT
HGTG18N120BN	INTERSIL	获取价格	54A, 1200V, NPT Series N-Channel IGBT
HGTG18N120BN	ONSEMI	获取价格	1200 V NPT IGBT
HGTG18N120BN_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247
HGTG18N120BND	INTERSIL	获取价格	54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BND	ONSEMI	获取价格	IGBT，1200V，NPT
HGTG18N120BND	FAIRCHILD	获取价格	54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BND_07	FAIRCHILD	获取价格	54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BND_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247

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