Datasheet > HGTG15N120C3D

HGTG15N120C3D

更新时间： 2024-09-13 22:34:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管电动机控制瞄准线双极性晶体管栅局域网超快速恢复二极管
页数	文件大小	规格书
9页	105K
描述
35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG15N120C3D 数据手册

HGTG15N120C3D

35A, 1200V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

May 1997

Features

Description

• 35A, 1200V at T = 25 C

The HGTG15N120C3D is a MOS gated high voltage switch-

ing device combining the best features of MOSFETs and

bipolar transistors. This device has the high input impedance

• 1200V Switching SOA Capability

of a MOSFET and the low on-state conduction loss of a

bipolar transistor. The much lower on-state voltage drop var-

• Typical Fall Time at T = 150 C . . . . . . . . . . . . . . 350ns

• Short Circuit Rating

• Low Conduction Loss

ies only moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Ordering Information

PART NUMBER

PACKAGE

TO-247

BRAND

15N120C3D

HGTG15N120C3D

The diode used in anti-Parallel with the IGBT is the same as

the RHRP15120. The IGBT was formerly development type

TA49145.

NOTE: When ordering, use the entire part number.

Formerly Developmental Type TA49133.

Symbol

Packaging

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

INTERSIL CORPRATION’s IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,969,027

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4267.1

12 3 4 5 6 7...9

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