Datasheet > HGTG18N120BND

HGTG18N120BND

更新时间： 2024-09-13 22:09:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管功率控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
7页	98K
描述
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG18N120BND 数据手册

HGTG18N120BND

Data Sheet

January 2000

File Number 4555.1

54A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 54A, 1200V, T = 25 C

The HGTG18N120BND is a Non-Punch Through (NPT)

IGBT design. This is a new member of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49304.

Ordering Information

PART NUMBER

PACKAGE

BRAND

18N120BND

HGTG18N120BND

TO-247

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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HGTG18N120BND 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG18N120BND相关器件

型号	品牌	获取价格	描述	数据表
HGTG18N120BND_07	FAIRCHILD	获取价格	54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG18N120BND_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247
HGTG20N100D2	INTERSIL	获取价格	20A, 1000V N-Channel IGBT
HGTG20N120	INTERSIL	获取价格	34A, 1200V N-Channel IGBT
HGTG20N120B3	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-247
HGTG20N120B3D	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-247
HGTG20N120C3D	INTERSIL	获取价格	45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N120CN	INTERSIL	获取价格	63A, 1200V, NPT Series N-Channel IGBT
HGTG20N120CND	INTERSIL	获取价格	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N120CND	FAIRCHILD	获取价格	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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