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HGTG12N60D1D

更新时间： 2024-09-09 22:51:19
品牌 Logo 应用领域
英特矽尔 - INTERSIL 二极管双极性晶体管栅
页数 文件大小 规格书
6页 40K
描述
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

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HGTG12N60D1D 数据手册

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HGTG12N60D1D  
12A, 600V N-Channel IGBT  
with Anti-Parallel Ultrafast Diode  
April 1995  
Features  
Package  
JEDEC STYLE TO-247  
• 12A, 600V  
• Latch Free Operation  
• Typical Fall Time <500ns  
• Low Conduction Loss  
• With Anti-Parallel Diode  
• tRR < 60ns  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(BOTTOM SIDE  
METAL)  
Description  
The IGBT is a MOS gated high voltage switching device  
combining the best features of MOSFETs and bipolar  
transistors. The device has the high input impedance of a  
MOSFET and the low on-state conduction loss of a bipolar  
transistor. The much lower on-state voltage drop varies only  
moderately between +25oC and +150oC. The diode used in  
parallel with the IGBT is an ultrafast (tRR < 60ns) with soft  
recovery characteristic.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
The IGBTs are ideal for many high voltage switching applica-  
tions operating at frequencies where low conduction losses  
are essential, such as: AC and DC motor controls, power  
supplies and drivers for solenoids, relays and contactors.  
G
E
PACKAGING AVAILABILITY  
PART NUMBER  
PACKAGE  
TO-220AB  
BRAND  
HGTG12N60D1D  
G12N60D1D  
NOTE: When ordering, use the entire part number  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTG12N60D1D  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
600  
600  
21  
12  
48  
V
V
A
A
A
V
-
CES  
CGR  
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
GE  
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
C
C25  
C90  
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
CM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±20  
30A at 0.8 BV  
GES  
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA  
J
CES  
o
Diode Forward Current at T = +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
21  
12  
75  
0.6  
A
A
W
C
F25  
F90  
o
at T = +90 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
C
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
-55 to +150  
260  
C
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
(0.125 inches from case for 5s)  
L
NOTE:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2800.4  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-46  
123456

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