HGTG12N60D1D
12A, 600V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
April 1995
Features
Package
JEDEC STYLE TO-247
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns
EMITTER
COLLECTOR
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC. The diode used in
parallel with the IGBT is an ultrafast (tRR < 60ns) with soft
recovery characteristic.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
The IGBTs are ideal for many high voltage switching applica-
tions operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
TO-220AB
BRAND
HGTG12N60D1D
G12N60D1D
NOTE: When ordering, use the entire part number
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTG12N60D1D
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
600
21
12
48
V
V
A
A
A
V
-
CES
CGR
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
GE
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
C25
C90
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
30A at 0.8 BV
GES
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
J
CES
o
Diode Forward Current at T = +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
21
12
75
0.6
A
A
W
C
F25
F90
o
at T = +90 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to +150
260
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(0.125 inches from case for 5s)
L
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 2800.4
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