是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 530 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 43.5 A | 最大漏极电流 (ID): | 43.5 A |
最大漏源导通电阻: | 0.039 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 146 W | 最大脉冲漏极电流 (IDM): | 174 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQP44N10 | FAIRCHILD |
类似代替 |
100V N-Channel MOSFET | |
IPI47N10SL-26 | INFINEON |
功能相似 |
SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level | |
IPB47N10SL-26 | INFINEON |
功能相似 |
SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP45N03L | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-220 | |
FQP45N03LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
FQP45N15V2 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQP45N15V2 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,150 V,45 A,40 mΩ,TO-220 | |
FQP46N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQP46N15 | ONSEMI |
获取价格 |
N 沟道,QFET® MOSFET,150V,45.6A,42mΩ | |
FQP46N15-Q | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FQP47P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQP47P06 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-60 V,-47 A,26 mΩ,TO-220 | |
FQP47P06 | UMW |
获取价格 |
种类:P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25°C |