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FQP44N10F PDF预览

FQP44N10F

更新时间: 2024-11-16 10:23:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 749K
描述
100V N-Channel MOSFET

FQP44N10F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
Is Samacsys:N雪崩能效等级(Eas):530 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):43.5 A最大漏极电流 (ID):43.5 A
最大漏源导通电阻:0.039 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):146 W最大脉冲漏极电流 (IDM):174 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQP44N10F 数据手册

 浏览型号FQP44N10F的Datasheet PDF文件第2页浏览型号FQP44N10F的Datasheet PDF文件第3页浏览型号FQP44N10F的Datasheet PDF文件第4页浏览型号FQP44N10F的Datasheet PDF文件第5页浏览型号FQP44N10F的Datasheet PDF文件第6页浏览型号FQP44N10F的Datasheet PDF文件第7页 
January 2006  
TM  
FRFET  
FQP44N10F  
100V N-Channel MOSFET  
Features  
Description  
43.5A, 100V, RDS(on) = 0.039@VGS = 10 V  
Low gate charge ( typical 48 nC)  
Low Crss ( typical 85 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
These N-Channel enhancement mode power field effect tran-  
sist-ors are produced using Fairchild’s proprietary, planar stripe,  
DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performanc-e, and withstand high energy pulse in the  
avalanche and co-mmutation mode. These devices are well  
suited for low voltage applications such as audio amplifier, high  
efficiency switching DC/DC converters, and DC motor control.  
D
G
TO-220  
FQP Series  
G
D S  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FQP44N10F  
Units  
V
VDSS  
ID  
Drain-Source Voltage  
100  
43.5  
Drain Current  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
A
30.8  
A
(Note 1)  
IDM  
Drain Current  
174  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 25  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
530  
mJ  
A
43.5  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
14.6  
mJ  
V/ns  
W
15  
146  
- Derate above 25°C  
0.97  
W/°C  
°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
300  
°C  
Thermal Characteristics  
Symbol  
Parameter  
FQP44N10F  
Units  
°C/W  
°C/W  
°C/W  
RθJC  
RθCS  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
1.03  
0.5  
62.5  
©2005 Fairchild Semiconductor Corporation  
FQP44N10F Rev. A1  
1
www.fairchildsemi.com  

FQP44N10F 替代型号

型号 品牌 替代类型 描述 数据表
FQP44N10 FAIRCHILD

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种类:P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25°C