是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 0.95 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 1072671 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | MOSFET (P-Channel) |
Samacsys Package Category: | Transistor Outline, Vertical | Samacsys Footprint Name: | FQP47P06_1 |
Samacsys Released Date: | 2019-01-03 13:44:56 | Is Samacsys: | N |
雪崩能效等级(Eas): | 820 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 47 A |
最大漏极电流 (ID): | 47 A | 最大漏源导通电阻: | 0.026 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 160 W |
最大脉冲漏极电流 (IDM): | 188 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP4N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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FQP4N20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met |
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FQP4N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET |
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FQP4N20L | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,200 V,3.8 A,1.35 Ω, |
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FQP4N25 | FAIRCHILD |
获取价格 |
250V Channel MOSFET |
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FQP4N25 | ROCHESTER |
获取价格 |
3.6A, 250V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN |
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FQP4N50 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET |
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FQP4N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |
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FQP4N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET |
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FQP4N80 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,800 V,3.9 A,3.6 Ω,TO-220 |
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