5秒后页面跳转
FQP50N06L PDF预览

FQP50N06L

更新时间: 2024-09-09 11:10:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网PC开关脉冲晶体管
页数 文件大小 规格书
9页 1207K
描述
功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,52.4 A,21 mΩ,TO-220

FQP50N06L 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.94
雪崩能效等级(Eas):990 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):52.4 A
最大漏极电流 (ID):52.4 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):121 W
最大脉冲漏极电流 (IDM):210 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQP50N06L 数据手册

 浏览型号FQP50N06L的Datasheet PDF文件第2页浏览型号FQP50N06L的Datasheet PDF文件第3页浏览型号FQP50N06L的Datasheet PDF文件第4页浏览型号FQP50N06L的Datasheet PDF文件第5页浏览型号FQP50N06L的Datasheet PDF文件第6页浏览型号FQP50N06L的Datasheet PDF文件第7页 
ON Semiconductor  
Is Now  
To learn more about onsemi™, please visit our website at  
www.onsemi.com  
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi  
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without  
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,  
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,  
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/  
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  

与FQP50N06L相关器件

型号 品牌 获取价格 描述 数据表
FQP50N06LJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, M
FQP55N06 FAIRCHILD

获取价格

60V N-Channel MOSFET
FQP55N06J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
FQP55N10 FAIRCHILD

获取价格

100V N-Channel MOSFET
FQP55N10 THINKISEMI

获取价格

55A,100V Heatsink Planar N-Channel Power MOSFET
FQP55N10 ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,100 V,55 A,26 mΩ,TO-220
FQP55N10J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
FQP58N08 FAIRCHILD

获取价格

80V N-Channel MOSFET
FQP58N08J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, M
FQP5N15 FAIRCHILD

获取价格

150V N-CHANNEL MOSFET