生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.66 |
雪崩能效等级(Eas): | 300 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 1.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP5N50C-F080 | FAIRCHILD |
获取价格 |
Transistor |
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FQP5N50C-F105 | FAIRCHILD |
获取价格 |
Transistor |
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FQP5N50J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Met |
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FQP5N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |
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FQP5N60C | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET |
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FQP5N60C | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,600 V,4.5 A,2.5 Ω,TO-220 |
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FQP5N60C_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met |
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FQP5N60J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o |
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FQP5N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET |
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FQP5N90 | FAIRCHILD |
获取价格 |
900V N-Channel MOSFET |
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