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FQP5N60C PDF预览

FQP5N60C

更新时间： 2023-09-03 20:31:50
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 1038K
描述
功率 MOSFET，N 沟道，QFET®，600 V，4.5 A，2.5 Ω，TO-220

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中文翻译

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FQP5N60C 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：3.94
雪崩能效等级（Eas）：210 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (Abs) (ID)：4.5 A
最大漏极电流 (ID)：4.5 A最大漏源导通电阻：2.5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：100 W
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

FQP5N60C 数据手册

 浏览型号FQP5N60C的Datasheet PDF文件第2页浏览型号FQP5N60C的Datasheet PDF文件第3页浏览型号FQP5N60C的Datasheet PDF文件第4页浏览型号FQP5N60C的Datasheet PDF文件第5页浏览型号FQP5N60C的Datasheet PDF文件第6页浏览型号FQP5N60C的Datasheet PDF文件第7页 
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