是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 162 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 9 A | 最大漏源导通电阻: | 0.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 36 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP630J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal |
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FQP630TSTU | FAIRCHILD |
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200V N-Channel MOSFET |
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FQP65N06 | FAIRCHILD |
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60V N-Channel MOSFET |
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FQP65N06 | ONSEMI |
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功率 MOSFET,N 沟道,QFET®,60 V,65 A,16 mΩ,TO-220 |
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FQP65N06J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met |
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FQP6N15 | FAIRCHILD |
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150V N-Channel MOSFET |
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FQP6N25 | FAIRCHILD |
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250V n-Channel MOSFET |
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FQP6N40 | FAIRCHILD |
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400V N-Channel MOSFET |
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FQP6N40C | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET |
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FQP6N40C | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,400 V,6 A,1.0 Ω,TO-220 |
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