5秒后页面跳转
FQP6N40CF_06 PDF预览

FQP6N40CF_06

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1071K
描述
400V N-Channel MOSFET

FQP6N40CF_06 数据手册

 浏览型号FQP6N40CF_06的Datasheet PDF文件第2页浏览型号FQP6N40CF_06的Datasheet PDF文件第3页浏览型号FQP6N40CF_06的Datasheet PDF文件第4页浏览型号FQP6N40CF_06的Datasheet PDF文件第5页浏览型号FQP6N40CF_06的Datasheet PDF文件第6页浏览型号FQP6N40CF_06的Datasheet PDF文件第7页 
February 2006  
TM  
FRFET  
FQP6N40CF/FQPF6N40CF  
400V N-Channel MOSFET  
Features  
Description  
6A, 400V, RDS(on)  
=
1.1 @VGS = 10 V  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficiency switched mode power supplies, electronic lamp  
ballasts based on half bridge topology.  
Low gate charge ( typical 16nC)  
Low Crss ( typical 15pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
Fast recovery body diode (typical 70ns)  
D
G
TO-220F  
FQPF Series  
TO-220  
FQP Series  
G D  
S
G
D S  
S
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
FQP6N40CF  
FQPF6N40CF  
Units  
V
Drain-Source Voltage  
400  
ID  
Drain Current  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
6
6*  
A
3.6  
24  
3.6*  
24*  
A
IDM  
Drain Current  
(Note 1)  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 30  
270  
6
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
- Derate above 25°C  
73  
mJ  
V/ns  
W
4.5  
73  
38  
0.58  
0.3  
W/°C  
°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
°C  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
FQP6N40CF  
FQPF6N40CF  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
1.71  
0.5  
3.31  
--  
RθCS  
RθJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
62.5  
©2006 Fairchild Semiconductor Corporation  
FQP6N40CF/FQPF6N40CF Rev. B  
1
www.fairchildsemi.com  

与FQP6N40CF_06相关器件

型号 品牌 描述 获取价格 数据表
FQP6N40CF_12 FAIRCHILD 400V N-Channel MOSFET

获取价格

FQP6N40CF_NL FAIRCHILD 暂无描述

获取价格

FQP6N45 FAIRCHILD 450V N-Channel MOSFET

获取价格

FQP6N45J69Z FAIRCHILD Power Field-Effect Transistor, 6.2A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Met

获取价格

FQP6N50 FAIRCHILD 500V n-Channel MOSFET

获取价格

FQP6N50C FAIRCHILD 500V N-Channel MOSFET

获取价格