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FQP6N40CF_06 PDF预览

FQP6N40CF_06

更新时间: 2024-11-16 04:18:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1071K
描述
400V N-Channel MOSFET

FQP6N40CF_06 数据手册

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February 2006  
TM  
FRFET  
FQP6N40CF/FQPF6N40CF  
400V N-Channel MOSFET  
Features  
Description  
6A, 400V, RDS(on)  
=
1.1 @VGS = 10 V  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficiency switched mode power supplies, electronic lamp  
ballasts based on half bridge topology.  
Low gate charge ( typical 16nC)  
Low Crss ( typical 15pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
Fast recovery body diode (typical 70ns)  
D
G
TO-220F  
FQPF Series  
TO-220  
FQP Series  
G D  
S
G
D S  
S
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
FQP6N40CF  
FQPF6N40CF  
Units  
V
Drain-Source Voltage  
400  
ID  
Drain Current  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
6
6*  
A
3.6  
24  
3.6*  
24*  
A
IDM  
Drain Current  
(Note 1)  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 30  
270  
6
V
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
mJ  
A
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
- Derate above 25°C  
73  
mJ  
V/ns  
W
4.5  
73  
38  
0.58  
0.3  
W/°C  
°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
°C  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
FQP6N40CF  
FQPF6N40CF  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
1.71  
0.5  
3.31  
--  
RθCS  
RθJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
62.5  
©2006 Fairchild Semiconductor Corporation  
FQP6N40CF/FQPF6N40CF Rev. B  
1
www.fairchildsemi.com  

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