February 2006
TM
FRFET
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
•
6A, 400V, RDS(on)
=
1.1 Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
Low gate charge ( typical 16nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 70ns)
D
G
TO-220F
FQPF Series
TO-220
FQP Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
FQP6N40CF
FQPF6N40CF
Units
V
Drain-Source Voltage
400
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
6
6*
A
3.6
24
3.6*
24*
A
IDM
Drain Current
(Note 1)
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
270
6
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
73
mJ
V/ns
W
4.5
73
38
0.58
0.3
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
Parameter
FQP6N40CF
FQPF6N40CF
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
1.71
0.5
3.31
--
RθCS
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
©2006 Fairchild Semiconductor Corporation
FQP6N40CF/FQPF6N40CF Rev. B
1
www.fairchildsemi.com