是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
雪崩能效等级(Eas): | 55 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 4.5 A |
最大漏极电流 (ID): | 4.5 A | 最大漏源导通电阻: | 1.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 40 W |
最大脉冲漏极电流 (IDM): | 18 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP5P20 | FAIRCHILD |
获取价格 |
200V P-Channel MOSFET |
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FQP5P20J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.8A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Met |
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FQP60N03L | FAIRCHILD |
获取价格 |
30V LOGIC N-Channel MOSFET |
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FQP630 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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FQP630J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal |
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FQP630TSTU | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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FQP65N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET |
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FQP65N06 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,60 V,65 A,16 mΩ,TO-220 |
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FQP65N06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met |
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FQP6N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET |
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