Datasheet > FQP5N50C-F105

FQP5N50C-F105

更新时间： 2024-01-10 16:09:05

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	879K
描述
Transistor

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技术参数
数据手册

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FQP5N50C-F105 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

FQP5N50C-F105 数据手册

QFET

FQP5N50C/FQPF5N50C

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

•

5A, 500V, R

= 1.4 Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 18nC)

Low Crss ( typical 15pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP5N50C

FQPF5N50C

Units

Drain-Source Voltage

500

DSS

- Continuous (T = 25°C)

Drain Current

5 *

- Continuous (T = 100°C)

2.9

2.9 *

20 *

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

300

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.3

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.58

0.3

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FQP5N50C

FQPF5N50C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.71

0.5

3.31

θJC

θJS

62.5

θJA

Rev. A, April 2003

12 3 4 5 6 7...10

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