Datasheet > FQP55N10

FQP55N10

更新时间： 2024-11-16 12:57:39

品牌	Logo	应用领域
THINKISEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	757K
描述
55A,100V Heatsink Planar N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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FQP55N10 数据手册

FML21U thru FML26U

FML21U/FML22U/FML23U/FML24U/FML25U/FML26U

Pb Free Plating Product

10 Amperes Insulated Dual Doubler Polarity Ultra Fast Recovery Half Bridge Rectifiers

ITO-220AB/TO-220F-3L

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

.130(3.3)

.114(2.9)

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Car Audio Amplifiers and Sound Device Systems

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 1.75 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "U" Suffix "UR"

Series

Negative

Common Cathode Common Anode

Suffix "S" Suffix "R"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

℃

Rating at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

FML25U

FML23U

FML21U

UNIT

SYMBOL

FML22U

FML24U

FML26U

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

10.0

100

1.3

IF(AV)

(Total Device 2*5A=10A)

Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

1.7

0.98

(Both Diode/Per Diode/Per Leg)

@ 5.0 A

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

μA

100

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

℃

R JC

3.0

Operating Junction and Storage

Temperature Range

-55 to +150

℃

TJ, TSTG

NOTES : (1) Reverse recovery test conditions I^F= 0.5A, I^R= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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与FQP55N10相关器件

型号	品牌	获取价格	描述	数据表
FQP55N10J69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
FQP58N08	FAIRCHILD	获取价格	80V N-Channel MOSFET
FQP58N08J69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, M
FQP5N15	FAIRCHILD	获取价格	150V N-CHANNEL MOSFET
FQP5N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQP5N20J69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FQP5N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQP5N20LJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.5A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Me
FQP5N20LL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Meta
FQP5N20LS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Meta

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