是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 1.03 |
雪崩能效等级(Eas): | 460 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (Abs) (ID): | 3.9 A |
最大漏极电流 (ID): | 3.9 A | 最大漏源导通电阻: | 3.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 130 W |
最大脉冲漏极电流 (IDM): | 15.6 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP4N80J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Met |
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FQP4N90 | FAIRCHILD |
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900V N-Channel MOSFET |
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FQP4N90C | FAIRCHILD |
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900V N-Channel MOSFET |
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FQP4N90C | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,900 V,4 A,4.2 Ω,TO-220 |
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FQP4N90J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 4.2A I(D), 900V, 3.1ohm, 1-Element, N-Channel, Silicon, Met |
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FQP4P25 | FAIRCHILD |
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250V P-Channel MOSFET |
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FQP4P25J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 4A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal |
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FQP4P40 | FAIRCHILD |
获取价格 |
400V P-Channel MOSFET |
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FQP4P40 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-400 V,-3.5 A,3.1 Ω,TO-2 |
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FQP4P40J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Met |
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