生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.66 | 雪崩能效等级(Eas): | 280 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 2.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP4P40 | FAIRCHILD |
获取价格 |
400V P-Channel MOSFET |
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FQP4P40 | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-400 V,-3.5 A,3.1 Ω,TO-2 |
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FQP4P40J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Met |
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FQP50N06 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET |
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FQP50N06 | TGS |
获取价格 |
60V N-Channel MOSFET |
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FQP50N06 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,60 V,50 A,22 mΩ,TO-220 |
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FQP50N06J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met |
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FQP50N06L | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,52.4 A,21 mΩ,T |
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FQP50N06L | FAIRCHILD |
获取价格 |
60V LOGIC N-Channel MOSFET |
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FQP50N06LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, M |
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